Invention Grant
- Patent Title: MOSFET and memory cell having improved drain current through back bias application
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Application No.: US15724989Application Date: 2016-04-27
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Publication No.: US10553683B2Publication Date: 2020-02-04
- Inventor: Jin-Woo Han , Yuniarto Widjaja , Zvi Or-Bach , Dinesh Maheshwari
- Applicant: Jin-Woo Han , Yuniarto Widjaja , Zvi Or-Bach , Dinesh Maheshwari , Zeno Semiconductor, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Law Office of Alan W. Cannon
- International Application: PCT/US2016/029436 WO 20160427
- International Announcement: WO2016/176248 WO 20161103
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/78 ; H01L29/08 ; H01L29/423 ; H01L27/02 ; H01L27/092 ; G11C16/10 ; G11C16/26 ; H01L27/24 ; H01L27/12 ; H01L29/788 ; H01L29/792 ; H01L29/32 ; H01L21/265 ; H03K19/20 ; H03K19/21 ; H01L29/06 ; H03K19/0948 ; G11C16/04 ; G11C13/00
Abstract:
A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.
Public/Granted literature
- US20180158912A1 MOSFET and Memory Cell Having Improved Drain Current Through Back Bias Application Public/Granted day:2018-06-07
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