Invention Grant
- Patent Title: Vertically stacked dual channel nanosheet devices
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Application No.: US15802021Application Date: 2017-11-02
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Publication No.: US10553678B2Publication Date: 2020-02-04
- Inventor: Choonghyun Lee , Jingyun Zhang , Pouya Hashemi , Takashi Ando , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/092 ; H01L29/161 ; H01L29/423 ; H01L29/10 ; H01L29/08 ; H01L21/02 ; H01L21/306 ; H01L29/66 ; H01L21/324 ; H01L21/8238 ; H01L21/84 ; H01L27/12 ; H01L29/786 ; H01L21/311
Abstract:
A semiconductor structure having electrostatic control and a low threshold voltage is provided. The structure includes an nFET containing vertically stacked and suspended Si channel material nanosheets stacked vertically above a pFET containing vertically stacked and suspended SiGe channel material nanosheets. The vertically stacked nFET and pFET include a single work function metal.
Public/Granted literature
- US20190131395A1 VERTICALLY STACKED DUAL CHANNEL NANOSHEET DEVICES Public/Granted day:2019-05-02
Information query
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