Invention Grant
- Patent Title: Isolation of semiconductor device with buried cavity
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Application No.: US15785627Application Date: 2017-10-17
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Publication No.: US10553675B2Publication Date: 2020-02-04
- Inventor: Sebastian Schmidt , Donald Dibra , Oliver Hellmund , Peter Irsigler , Andreas Meiser , Hans-Joachim Schulze , Martina Seider-Schmidt , Robert Wiesner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102016119799 20161018
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/02 ; H01L21/265 ; H01L21/762 ; H01L21/84 ; H01L27/12

Abstract:
In accordance with an embodiment of an integrated circuit, a cavity is buried in a semiconductor body below a first surface of the semiconductor body. An active area portion of the semiconductor body is arranged between the first surface and the cavity. The integrated circuit further includes a trench isolation structure configured to provide a lateral electric isolation of the active area portion.
Public/Granted literature
- US20180108675A1 Integrated Circuit Including Buried Cavity and Manufacturing Method Public/Granted day:2018-04-19
Information query
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