- Patent Title: Methods used in forming at least a portion of at least one conductive capacitor electrode of a capacitor that comprises a pair of conductive capacitor electrodes having a capacitor insulator there-between and methods of forming a capacitor
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Application No.: US15855665Application Date: 2017-12-27
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Publication No.: US10553673B2Publication Date: 2020-02-04
- Inventor: Manuj Nahar , Vassil N. Antonov
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/02 ; C23C16/34 ; C23C16/40 ; C23C16/455 ; H01L27/108 ; B82Y99/00 ; H01L49/02
Abstract:
A method used in forming at least a portion of at least one conductive capacitor electrode of a capacitor that comprises a pair of conductive capacitor electrodes having a capacitor insulator there-between comprises forming an insulative first material comprising an amorphous insulative metal oxide. The amorphous insulative metal oxide is reduced in a reducing-ambient to form a conductive second material from the insulative first material. Such reducing in the reducing-ambient both (a) removes oxygen from and changes the stoichiometry of the metal oxide, and (b) crystallizes the metal oxide into a crystalline state that is conductive.
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