Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
-
Application No.: US16043731Application Date: 2018-07-24
-
Publication No.: US10553603B2Publication Date: 2020-02-04
- Inventor: Tetsuya Yamashita
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2018-043173 20180309
- Main IPC: H01L27/11573
- IPC: H01L27/11573 ; H01L27/11529 ; H01L27/11582 ; H01L21/768 ; H01L27/11556 ; H01L21/28 ; H01L21/822 ; H01L27/1158 ; H01L27/11578 ; H01L27/06
Abstract:
A semiconductor device according to an embodiment includes a substrate, first to third conductors, and first and second contacts. The first conductor is provided in a first layer above the substrate. The first contact extends in a first direction, and is provided on the first conductor. The second conductor is provided in the first layer and is insulated from the first conductor. The third conductor is provided between the second conductor and the substrate. The second contact extends in the first direction through the second conductor, and is provided on the third conductor. A width of the second contact, as viewed in a second direction, differs between a portion above a boundary face that is included in the first layer and is parallel to the surface of the substrate, and a portion that is below the boundary face.
Public/Granted literature
- US20190279996A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2019-09-12
Information query
IPC分类:
