A device includes a semiconductor structure comprising a top package stacked on a bottom package, wherein the bottom package comprises a plurality of bottom package bumps on a bottom surface of the bottom package, a front side contact metal, a molding compound layer and a backside contact metal, and wherein the front side contact metal is between the plurality of bottom package bumps and the molding compound layer and a metal shielding layer on a top surface, sidewalls of the semiconductor structure and portions of a bottom surface of the bottom package, wherein the metal shielding layer is in direct contact with an edge of at least one of the front side contact metal and the backside contact metal.