Invention Grant
- Patent Title: Cavity formation in backside interface layer for radio-frequency isolation
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Application No.: US15833175Application Date: 2017-12-06
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Publication No.: US10553549B2Publication Date: 2020-02-04
- Inventor: David T. Petzold , David Scott Whitefield
- Applicant: SKYWORKS SOLUTIONS, INC.
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Chang & Hale LLP
- Main IPC: H03H9/02
- IPC: H03H9/02 ; H03H9/24 ; H04B1/40 ; H04B1/44 ; H01L21/84 ; H01L23/00 ; H01L23/31 ; H01L23/66 ; H01L25/16 ; H01L27/12 ; H01L27/20 ; H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L49/02 ; H01L21/306 ; H01L21/683 ; H01L21/762 ; H01L21/764 ; H01L21/768 ; H01L29/786 ; H01L23/528 ; H01L23/535
Abstract:
A semiconductor device includes a transistor device implemented over an oxide layer, an interface layer applied below at least a portion of the oxide layer, the interface layer having a trench formed therein, and a substrate layer covering at least a portion of the interface layer and the trench to form a cavity.
Public/Granted literature
- US20180108620A1 CAVITY FORMATION IN BACKSIDE INTERFACE LAYER FOR RADIO-FREQUENCY ISOLATION Public/Granted day:2018-04-19
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