Invention Grant
- Patent Title: Substrate and semiconductor device package
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Application No.: US15702700Application Date: 2017-09-12
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Publication No.: US10553527B2Publication Date: 2020-02-04
- Inventor: Dao-Long Chen , Chih-Pin Hung
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Agent Cliff Z. Liu
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/29 ; H01L23/00
Abstract:
A substrate including a dielectric layer and a patterned conductive layer adjacent to the dielectric layer is provided. The patterned conductive layer comprises a first conductive pad, the first conductive pad comprises a first portion having a first concave sidewall. The substrate further includes a protection layer disposed on the patterned conductive layer, and the protection layer covers the first portion of the first conductive pad.
Public/Granted literature
- US20190080993A1 SUBSTRATE AND SEMICONDUCTOR DEVICE PACKAGE Public/Granted day:2019-03-14
Information query
IPC分类:
