Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15544235Application Date: 2015-11-20
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Publication No.: US10553523B2Publication Date: 2020-02-04
- Inventor: Yoshihiro Kamiyama
- Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Ladas & Parry, LLP
- International Application: PCT/JP2015/082712 WO 20151120
- International Announcement: WO2017/085866 WO 20170526
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L25/07 ; H01L25/18 ; H01L23/00

Abstract:
A semiconductor device (100) comprises a main body portion (50), a semiconductor element (51), a sealing portion (60) and a first lead (10). The first lead (10) has a first base end portion (11) provided along the first direction, a protruding portion (12) protruding from the first base end portion (11) in a second direction different and having a positioning hole (13) formed therein, and a first tip end portion (17) provided in the first base end portion (11) via a bent portion (15). A slit (14) is formed in the protruding portion (12), and a positioning hole side end portion (13a) on the first base end portion (11) side of the positioning hole (13) is positioned on or more on the side opposite to the bent portion (15) than a straight line extending along the first direction from a bent-portion-side slit side end portion (14a) of the slit (14).
Public/Granted literature
- US20180269132A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-09-20
Information query
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