Invention Grant
- Patent Title: Semiconductor device including polysilicon structures having differing grain sizes and including a barrier layer therebetween
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Application No.: US15685220Application Date: 2017-08-24
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Publication No.: US10553476B2Publication Date: 2020-02-04
- Inventor: J. J. Lee , Chun-Tse Tsai , M. C. Hang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/28 ; H01L21/225 ; H01L21/02 ; H01L49/02 ; H01L29/49
Abstract:
A semiconductor device includes a substrate. The semiconductor device further includes a first polysilicon structure over the substrate. The first polysilicon structure has a first grain size. The semiconductor device further includes a first barrier layer over the first polysilicon structure. At least one grain boundary of the first polysilicon structure contacts the first barrier layer. The semiconductor device further includes a second polysilicon structure over the first barrier layer. The second polysilicon layer has a second grain size smaller than the first grain size.
Public/Granted literature
- US20180342417A1 SEMICONDUCTOR DEVICE INCLUDING POLYSILICON STRUCTURES AND METHOD OF FORMING THE SAME Public/Granted day:2018-11-29
Information query
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