Invention Grant
- Patent Title: Method for the correction of electron proximity effects
-
Application No.: US14915288Application Date: 2014-08-28
-
Publication No.: US10553394B2Publication Date: 2020-02-04
- Inventor: Nader Jedidi , Patrick Schiavone , Jean-Hervé Tortai , Thiago Figueiro
- Applicant: ASELTA NANOGRAPHICS
- Applicant Address: FR Grenoble
- Assignee: ASELTA NANOGRAPHICS
- Current Assignee: ASELTA NANOGRAPHICS
- Current Assignee Address: FR Grenoble
- Agency: Oliff PLC
- Priority: FR1302001 20130828
- International Application: PCT/FR2014/052139 WO 20140828
- International Announcement: WO2015/028753 WO 20150305
- Main IPC: H01J37/304
- IPC: H01J37/304 ; H01J37/285 ; H01J37/317
Abstract:
A method for projecting an electron beam onto a target includes correction of the scattering effects of the electrons in the target. This correction is made possible by a calculation step of a point spread function having a radial variation according to a piecewise polynomial function.
Public/Granted literature
- US20160211115A1 METHOD FOR THE CORRECTION OF ELECTRON PROXIMITY EFFECTS Public/Granted day:2016-07-21
Information query
