A magnetic domain wall type analog memory element includes: a magnetization fixed layer in which magnetization is oriented in a first direction; a non-magnetic layer provided in one surface of the magnetization fixed layer; a magnetic domain wall drive layer including a first area in which magnetization is oriented in the first direction, a second area in which magnetization is oriented in a second direction opposite to the first direction, and a magnetic domain wall formed as an interface between the areas and provided to sandwich the non-magnetic layer with respect to the magnetization fixed layer; and a current controller configured to cause a current to flow between the magnetization fixed layer and the second area at the time of reading.