Invention Grant
- Patent Title: Memory cells, memory cell arrays, methods of using and methods of making
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Application No.: US16519515Application Date: 2019-07-23
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Publication No.: US10553281B2Publication Date: 2020-02-04
- Inventor: Yuniarto Widjaja
- Applicant: Zeno Semiconductor, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Law Office of Alan W. Cannon
- Main IPC: G11C14/00
- IPC: G11C14/00 ; H01L27/24 ; H01L29/66 ; G11C13/00 ; H01L45/00 ; G11C11/56 ; G11C11/4074 ; G11C11/404 ; H01L27/102 ; G11C11/402 ; H01L27/105 ; H01L29/788 ; H01L29/78 ; H01L27/108 ; G11C16/04

Abstract:
A semiconductor memory cell and arrays of memory cells are provided In at least one embodiment, a memory cell includes a substrate having a top surface, the substrate having a first conductivity type selected from a p-type conductivity type and an n-type conductivity type; a first region having a second conductivity type selected from the p-type and n-type conductivity types, the second conductivity type being different from the first conductivity type, the first region being formed in the substrate and exposed at the top surface; a second region having the second conductivity type, the second region being formed in the substrate, spaced apart from the first region and exposed at the top surface; a buried layer in the substrate below the first and second regions, spaced apart from the first and second regions and having the second conductivity type; a body region formed between the first and second regions and the buried layer, the body region having the first conductivity type; a gate positioned between the first and second regions and above the top surface; and a nonvolatile memory configured to store data upon transfer from the body region.
Public/Granted literature
- US20190355419A1 MEMORY CELLS, MEMORY CELL ARRAYS, METHODS OF USING AND METHODS OF MAKING Public/Granted day:2019-11-21
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