Invention Grant
- Patent Title: Semiconductor memory apparatus with memory banks and semiconductor system including the same
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Application No.: US15989609Application Date: 2018-05-25
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Publication No.: US10553261B2Publication Date: 2020-02-04
- Inventor: Hyun Seung Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2017-0143325 20171031
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/22 ; G11C8/12 ; G11C8/06

Abstract:
A semiconductor memory apparatus includes first and second byte pads. A left-side peri-line couples the first byte pad and a first memory bank region and a right-side peri-line couples the second byte pad and a second memory bank region. A peri-repeater couples the left-side peri-line and the right-side peri-line based on a peri-strobe signal. The peri-strobe signal is generated based on byte information and memory bank selection information.
Public/Granted literature
- US20190130949A1 SEMICONDUCTOR MEMORY APPARATUS AND SEMICONDUCTOR SYSTEM INCLUDING THE SAME Public/Granted day:2019-05-02
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