Invention Grant
- Patent Title: Semiconductor device and memory module
-
Application No.: US15984572Application Date: 2018-05-21
-
Publication No.: US10552261B2Publication Date: 2020-02-04
- Inventor: Takeshi Hashizume , Naoya Fujita , Shunya Nagata , Yoshisato Yokoyama , Katsumi Shinbo , Kouji Satou
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2017-109880 20170602; JP2017-229137 20171129
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/10 ; G11C29/52 ; G06F3/06 ; G11C11/413

Abstract:
A selection decoder controls levels of a plurality of selection signals based on an address bit having at least one or more bits. A memory module is selected when its corresponding selection signal is at an activated level, and data can be read and written therein. A failure determination unit determines whether or not the selection decoder is in a failed state based on the levels of the plurality of selection signals.
Public/Granted literature
- US20180349222A1 SEMICONDUCTOR DEVICE AND MEMORY MODULE Public/Granted day:2018-12-06
Information query