Invention Grant
- Patent Title: Memory device
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Application No.: US15917495Application Date: 2018-03-09
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Publication No.: US10552255B2Publication Date: 2020-02-04
- Inventor: Hiromi Noro
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C29/52 ; G06F3/06

Abstract:
According to one embodiment, a semiconductor memory device includes: a memory configured to store data; an error correcting circuit configured to correct an error in data read from the memory, and to generate a first signal of a first state, which is transmitted to an external along with the data if the error in the data cannot be corrected; and a first pin configured to transmit the first signal to the external and receive a data mask signal from the external.
Public/Granted literature
- US20180196711A1 MEMORY DEVICE Public/Granted day:2018-07-12
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