Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15496275Application Date: 2017-04-25
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Publication No.: US10547170B2Publication Date: 2020-01-28
- Inventor: Akihiro Nakahara , Makoto Tanaka
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2016-103174 20160524
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H02H3/20 ; H03K17/14 ; H03K17/082 ; H03K17/687 ; G05F1/56 ; H02H7/125

Abstract:
A semiconductor device according to related art has a problem that a clamp voltage that clamps an output voltage cannot adaptively vary in accordance with a power supply voltage, and it is thus not possible to reduce heating of a semiconductor chip to a sufficiently low level. According to one embodiment, a semiconductor device includes a drive circuit (10) that controls on and off of an output transistor (13) and an overvoltage protection circuit (12) that controls a conductive state of the output transistor (13) when an output voltage Vout reaches a clamp voltage, and the overvoltage protection circuit (12) has a circuit structure that sets the clamp voltage to vary in proportion to a power supply voltage VDD.
Public/Granted literature
- US20170346274A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-11-30
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