Invention Grant
- Patent Title: Micro organic opto-electronic device configured for high current density
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Application No.: US16144429Application Date: 2018-09-27
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Publication No.: US10547022B2Publication Date: 2020-01-28
- Inventor: Homere Nkwawo , Alexis Fischer , Alex Chamberlain Chime , Lei Zeng , Min Lee , Mahmoud Chakaroun , Azzedine Boudrouia
- Applicant: Univ Paris XIII Paris-Nord Villetaneuse , Centre National de la Recherche Scientifique (CNRS)
- Applicant Address: FR FR
- Assignee: Univ Paris XIII Paris-Nord Villetaneuse,Centre National de La Recherche Scientifique (CNRS)
- Current Assignee: Univ Paris XIII Paris-Nord Villetaneuse,Centre National de La Recherche Scientifique (CNRS)
- Current Assignee Address: FR FR
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Priority: EP17306293 20170928
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/52 ; H01L51/44 ; H01L51/50

Abstract:
The invention relates to a micro Organic Opto-electronic device comprising a dielectric substrate (61, 131) and superposed on the dielectric substrate (61, 131): a first planar electrode (62) with a first extremity (65c); an organic layer stack (67), at least partially covering the first extremity; a second planar electrode (63) covering partially said first extremity (65c) and said organic layer stack (67) with a part, defining an active area (64); wherein the position and the geometry of the first extremity (65c) is configured so that the first extremity (65c) delimits a hollow zone (66) without conductive material, with an arch (65) surrounding the hollow zone (66), the arch (65) having two arms (65a) and a branch (65b) connecting the two arms (65a), the active area (64) been limited by the transversal dimension (Wb) of the said branch (65b) and the transversal dimension (W) of the part of the other extremity (63a).
Public/Granted literature
- US20190097164A1 Micro Organic Opto-Electronic Device Configured For High Current Density Public/Granted day:2019-03-28
Information query
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