Invention Grant
- Patent Title: Photoelectric conversion element, imaging element, optical sensor, and compound
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Application No.: US15871873Application Date: 2018-01-15
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Publication No.: US10547012B2Publication Date: 2020-01-28
- Inventor: Tomoaki Yoshioka , Naoyuki Hanaki
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: JCIPRNET
- Priority: JP2015-151022 20150730
- Main IPC: H01L51/00
- IPC: H01L51/00 ; C07F5/02 ; H01L27/146 ; H01L27/30 ; H01L27/148 ; H01L51/42

Abstract:
The present invention provides a photoelectric conversion element exhibiting excellent low dark current characteristics and heat resistance, an imaging element and an optical sensor which include the photoelectric conversion element, and a compound. The photoelectric conversion element of the present invention is a photoelectric conversion element photoelectric conversion element having a conductive film, a photoelectric conversion film, and a transparent conductive film in this order, in which the photoelectric conversion film contains a compound represented by General Formula (1) and an organic n-type compound.
Public/Granted literature
- US20180159039A1 PHOTOELECTRIC CONVERSION ELEMENT, IMAGING ELEMENT, OPTICAL SENSOR, AND COMPOUND Public/Granted day:2018-06-07
Information query
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