Invention Grant
- Patent Title: Semiconductor substrate with electrically isolating dielectric partition
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Application No.: US15356527Application Date: 2016-11-18
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Publication No.: US10546816B2Publication Date: 2020-01-28
- Inventor: Hans-Martin Ritter , Joachim Utzig , Frank Burmeister , Godfried Henricus Josephus Notermans , Jochen Wynants , Rainer Mintzlaff
- Applicant: Nexperia B.V.
- Applicant Address: NL Nijmegen
- Assignee: Nexperia B.V.
- Current Assignee: Nexperia B.V.
- Current Assignee Address: NL Nijmegen
- Agency: Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
- Priority: EP15200095 20151215
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/78 ; H01L23/29 ; H01L29/872 ; H01L29/20 ; H01L23/31 ; H01L29/205 ; H01L29/06
Abstract:
A semiconductor device and a method of making the same. The device includes a substrate comprising a major surface and a backside. The device also includes a dielectric partition for electrically isolating a first part of the substrate from a second part of the substrate. The dielectric partition extends through the substrate from the major surface to the backside.
Public/Granted literature
- US20180166388A9 SEMICONDUCTOR SUSBTRATE WITH ELECTRICALLY ISOLATING DIELECTRIC PARTITION Public/Granted day:2018-06-14
Information query
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