Invention Grant
- Patent Title: Semiconductor device including a substrate contact plug and manufacturing method thereof
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Application No.: US15908597Application Date: 2018-02-28
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Publication No.: US10546802B2Publication Date: 2020-01-28
- Inventor: Hiroaki Sekikawa , Shigeo Tokumitsu , Asuka Komuro
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2017-044587 20170309
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L29/06 ; H01L21/768 ; H01L21/762 ; H01L23/522 ; H01L27/092
Abstract:
A substrate contact plug which is connected to a wiring and a semiconductor substrate and does not form a circuit is formed in a seal ring region in a peripheral portion of a semiconductor chip region. The substrate contact plug is buried in a trench which is deeper than an element isolation trench.
Public/Granted literature
- US20180261530A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-09-13
Information query
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