Invention Grant
- Patent Title: Method for generating vertical profiles in organic layer etches
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Application No.: US15805857Application Date: 2017-11-07
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Publication No.: US10546756B2Publication Date: 2020-01-28
- Inventor: Sriharsha Jayanti , Sangjun Cho , Steven Chuang , Hsu-Cheng Huang , Jian Wu
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/033 ; H01L21/027 ; H01L21/02
Abstract:
A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of total flow rate of the etch gas to flow rate of the halogen containing component is between 10,000:1 to 10:1. The etch gas is formed into a plasma, wherein the organic carbon based layer and the silicon contain hardmask are exposed to the plasma and wherein the plasma selectively etches the organic carbon based layer with respect to the silicon containing hardmask.
Public/Granted literature
- US20180151386A1 METHOD FOR GENERATING VERTICAL PROFILES IN ORGANIC LAYER ETCHES Public/Granted day:2018-05-31
Information query
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