Invention Grant
- Patent Title: Method of removing silicon oxide film
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Application No.: US16038863Application Date: 2018-07-18
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Publication No.: US10546753B2Publication Date: 2020-01-28
- Inventor: Hideaki Yamasaki , Takamichi Kikuchi , Seishi Murakami
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2017-142746 20170724
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/02 ; H01L21/768 ; H01J37/00 ; H01L21/67 ; H01L21/683
Abstract:
Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.
Public/Granted literature
- US10504740B2 Method of removing silicon oxide film Public/Granted day:2019-12-10
Information query
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