Invention Grant
- Patent Title: Methods for fabricating acoustic structure with inclined c-axis piezoelectric bulk and crystalline seed layers
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Application No.: US15293071Application Date: 2016-10-13
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Publication No.: US10541662B2Publication Date: 2020-01-21
- Inventor: Kevin McCarron , John Belsick
- Applicant: Qorvo US, Inc.
- Applicant Address: US NC Greensboro
- Assignee: QORVO US, INC.
- Current Assignee: QORVO US, INC.
- Current Assignee Address: US NC Greensboro
- Agency: Mueting, Raasch & Gebhardt, P.A.
- Main IPC: H03H3/02
- IPC: H03H3/02 ; H01L41/35 ; H03H9/02 ; H03H9/205 ; H03H9/125 ; H01J37/34 ; C30B25/06 ; C30B25/18 ; C30B29/40 ; H01J37/32

Abstract:
Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
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