Invention Grant
- Patent Title: Three-level I-type inverter and semiconductor module
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Application No.: US16184254Application Date: 2018-11-08
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Publication No.: US10541624B2Publication Date: 2020-01-21
- Inventor: Masaaki Ishino , Nobuya Nishida
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2018-033003 20180227
- Main IPC: H02M7/5387
- IPC: H02M7/5387 ; H01L27/06 ; H01L23/00

Abstract:
A three-level I-type inverter includes first to fourth switching devices between first and second potentials, first to fourth diodes, and fifth and sixth diodes. The first to fourth diodes are respectively connected to the first to fourth switching devices in anti-parallel. Between a connection node of the first and second switching devices and a connection node of the third and fourth switching devices, the fifth and sixth diodes are connected in series and in anti-parallel with series connection of the second and third switching devices. A connection node of the fifth and sixth diodes is connected to an input node having intermediate potential. A connection node of the second and third switching devices is connected to an output node. The second switching device and diode are formed of a first reverse conducting IGBT. The third switching device and diode are formed of a second reverse conducting IGBT.
Public/Granted literature
- US20190267912A1 THREE-LEVEL I-TYPE INVERTER AND SEMICONDUCTOR MODULE Public/Granted day:2019-08-29
Information query
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