Invention Grant
- Patent Title: Surface emitting laser luminescent diode structure
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Application No.: US16299780Application Date: 2019-03-12
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Publication No.: US10541512B2Publication Date: 2020-01-21
- Inventor: Wei-Yu Yen , Li-Ping Chou , Tau-Jin Wu , Chih-Sung Chang
- Applicant: HIGH POWER OPTO. INC.
- Applicant Address: TW Taichung
- Assignee: High Power Opto. Inc.
- Current Assignee: High Power Opto. Inc.
- Current Assignee Address: TW Taichung
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW107114690A 20180430
- Main IPC: H01S5/183
- IPC: H01S5/183

Abstract:
The present invention is a surface emitting laser luminescent diode structure which is characterized in that a recess comprises two tilted slopes on two sides and a protruding trapezoidal cylinder located at the bottom center of the recess is disposed at the bottom of a laser resonant cavity. Thus, a reflecting mirror disposed along the surface of the recess includes two tilted side surfaces as leak-proof sides, which reduces the divergence angle and avoid the lateral light leakage. Additionally, a current isolating layer is disposed on the reflecting mirror and is designed to satisfy the condition (¼*wavelength*1/refractive index) of an optical film, thereby allowing the reflecting mirror to receive an excellent reflectance. Besides, the current isolating layer limits the flow direction of the current, thus increasing operating speed.
Public/Granted literature
- US20190334319A1 SURFACE EMITTING LASER LUMINESCENT DIODE STRUCTURE Public/Granted day:2019-10-31
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