Invention Grant
- Patent Title: High work function MoO2 back contacts for improved solar cell performance
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Application No.: US15425717Application Date: 2017-02-06
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Publication No.: US10541346B2Publication Date: 2020-01-21
- Inventor: Priscilla D. Antunez , Douglas M. Bishop , Gloria W. Fraczak , Oki Gunawan , Richard A. Haight
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Michael J. Chang, LLC
- Agent Vazken Alexanian
- Main IPC: H01L31/072
- IPC: H01L31/072 ; H01L31/18 ; H01L31/032

Abstract:
Improved high work function back contacts for solar cells are provided. In one aspect, a method of forming a solar cell includes: forming a completed solar cell having a substrate coated with an electrically conductive material, an absorber disposed on the electrically conductive material, a buffer layer disposed on the absorber, a transparent front contact disposed on the buffer layer, and a metal grid disposed on the transparent front contact; removing the substrate and the electrically conductive material using exfoliation, exposing a backside surface of the solar cell; depositing a high work function material onto the back side surface of the solar cell; and depositing a back contact onto the high work function material. A solar cell formed by the present techniques is also provided. Yield of the exfoliated device can be improved by removing bubbles from adhesive used for exfoliation and/or forming contact pads to access the metal grid.
Public/Granted literature
- US20180226524A1 High Work Function MoO2 Back Contacts for Improved Solar Cell Performance Public/Granted day:2018-08-09
Information query
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