Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US15998054Application Date: 2018-06-21
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Publication No.: US10541337B2Publication Date: 2020-01-21
- Inventor: Tomoaki Moriwaka
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2007-077217 20070323
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L21/02 ; H01L29/04 ; H01L29/417 ; H01L29/45 ; H01L21/285
Abstract:
The invention relates to a method for forming a uniform silicide film using a crystalline semiconductor film in which orientation of crystal planes is controlled, and a method for manufacturing a thin film transistor with less variation in electric characteristics, which is formed over an insulating substrate using the silicide film. A semiconductor film over which a cap film is formed is irradiated with a laser to be crystallized under the predetermined condition, so that a crystalline semiconductor film including large grain crystals in which orientation of crystal planes is controlled in one direction is formed. The crystalline semiconductor film is used for silicide, whereby a uniform silicide film can be formed.
Public/Granted literature
- US20180308985A1 Method for manufacturing semiconductor device Public/Granted day:2018-10-25
Information query
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