Invention Grant
- Patent Title: Fabrication of a vertical fin field effect transistor with an asymmetric gate structure
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Application No.: US16123665Application Date: 2018-09-06
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Publication No.: US10541331B2Publication Date: 2020-01-21
- Inventor: Shogo Mochizuki , Junli Wang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/49 ; H01L29/08 ; H01L29/51
Abstract:
A method of forming a vertical fin field effect transistor (vertical finFET) with two concentric gate structures, including forming one or more tubular vertical fins on a substrate, forming a first gate structure around an outer wall of at least one of the one or more tubular vertical fins, and forming a second gate structure within an inner wall of at least one of the one or more tubular vertical fins having the first gate structure around the outer wall.
Public/Granted literature
- US20190019889A1 FABRICATION OF A VERTICAL FIN FIELD EFFECT TRANSISTOR WITH AN ASYMMETRIC GATE STRUCTURE Public/Granted day:2019-01-17
Information query
IPC分类:
