- Patent Title: Method for fabricating drive circuit and organic light-emitting diode display each having switching transistor without etch stopping layer on oxide semiconductor
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Application No.: US16370500Application Date: 2019-03-29
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Publication No.: US10541290B2Publication Date: 2020-01-21
- Inventor: Yingteng Zhai , Yong Wu
- Applicant: SHANGHAI TIANMA MICRO-ELECTRONICS CO., LTD. , TIANMA MICRO-ELECTRONICS CO., LTD.
- Applicant Address: CN Shanghai CN Shenzhen
- Assignee: SHANGHAI TIANMA MICRO-ELECTRONICS CO., LTD.,TIANMA MICRO-ELECTRONICS CO., LTD.
- Current Assignee: SHANGHAI TIANMA MICRO-ELECTRONICS CO., LTD.,TIANMA MICRO-ELECTRONICS CO., LTD.
- Current Assignee Address: CN Shanghai CN Shenzhen
- Agency: Alston & Bird LLP
- Priority: CN201410448559 20140904
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L27/12 ; H01L29/66 ; H01L29/778 ; H01L29/786

Abstract:
A drive circuit, an organic light-emitting diode display, and methods for fabricating the same are provided. The drive circuit includes: a driving transistor, including a first gate, a first semiconductor layer disposed above the first gate, an etch stopping layer disposed on the first semiconductor layer, and a first source and a first drain which are disposed on the two sides of the first semiconductor layer, the first semiconductor layer being made of oxide semiconductor material; and a switching transistor, including a second gate, a second semiconductor layer disposed above the second gate, and a second source and a second drain which are disposed on two sides of the second semiconductor layer, the second semiconductor layer being made of oxide semiconductor material. In the drive circuit, reliability and uniformity of the drive transistors are improved, and parasitic capacitance of the switching transistor decreases.
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