Invention Grant
- Patent Title: Semiconductor device and method for production of semiconductor device
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Application No.: US15921441Application Date: 2018-03-14
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Publication No.: US10541265B2Publication Date: 2020-01-21
- Inventor: Atsushi Okuyama
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2009-193324 20090824
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L23/00 ; H01L25/00 ; H01L23/532 ; H01L21/768
Abstract:
A semiconductor device with a connection pad in a substrate, the connection pad having an exposed surface made of a metallic material that diffuses less readily into a dielectric layer than does a metal of a wiring layer connected thereto.
Public/Granted literature
- US20180204873A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCTION OF SEMICONDUCTOR DEVICE Public/Granted day:2018-07-19
Information query
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