Invention Grant
- Patent Title: Nickel-silicon fuse for FinFET structures
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Application No.: US16003820Application Date: 2018-06-08
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Publication No.: US10541203B2Publication Date: 2020-01-21
- Inventor: Kangguo Cheng , Keith E. Fogel , Pouya Hashemi , Alexander Reznicek
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent L. Jeffrey Kelly
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/525 ; H01L29/66 ; H01L21/02 ; H01L21/3105 ; H01L23/528 ; H01L23/485
Abstract:
Semiconductor fuses include a semiconductor fin having a metallized region between two non-metallized regions. Conductive layers are formed on the semiconductor fin above the two non-metallized regions. A dielectric layer is formed over the metallized region, between the conductive layers.
Public/Granted literature
- US20180294223A1 NICKEL-SILICON FUSE FOR FINFET STRUCTURES Public/Granted day:2018-10-11
Information query
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