Invention Grant
- Patent Title: Selective deposition method to form air gaps
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Application No.: US15836547Application Date: 2017-12-08
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Publication No.: US10541173B2Publication Date: 2020-01-21
- Inventor: Chiyu Zhu
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02
Abstract:
A method for depositing a film to form an air gap within a semiconductor device is disclosed. An exemplary method comprises pulsing a metal halide precursor onto the substrate and pulsing an oxygen precursor onto a selective deposition surface. The method can be used to form an air gap to, for example, reduce a parasitic resistance of the semiconductor device.
Public/Granted literature
- US20180102276A1 SELECTIVE DEPOSITION TO FORM AIR GAPS Public/Granted day:2018-04-12
Information query
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