Invention Grant
- Patent Title: Thermally conductive structure for heat dissipation in semiconductor packages
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Application No.: US15418949Application Date: 2017-01-30
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Publication No.: US10541154B2Publication Date: 2020-01-21
- Inventor: Chun-Hao Tseng , Ying-Hao Kuo , Kuo-Chung Yee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/00 ; H01L23/36 ; H01L23/373 ; H01L23/31 ; H01L21/56 ; H01L25/065 ; H01L25/00
Abstract:
A method of forming a semiconductor package includes providing a substrate, wherein the substrate has at least one chip attached on an upper surface of the substrate. An insulating barrier layer is deposited above the substrate, wherein the at least one chip is at least partially embedded within the insulating barrier layer. A thermally conductive layer is formed over the insulating barrier layer to at least partially encapsulate the at least one chip.
Public/Granted literature
- US20170140945A1 THERMALLY CONDUCTIVE STRUCTURE FOR HEAT DISSIPATION IN SEMICONDUCTOR PACKAGES Public/Granted day:2017-05-18
Information query
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