Invention Grant
- Patent Title: Method of cyclic plasma etching of organic film using sulfur-based chemistry
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Application No.: US15963218Application Date: 2018-04-26
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Publication No.: US10541146B2Publication Date: 2020-01-21
- Inventor: Vinayak Rastogi , Alok Ranjan
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/3065 ; H01L21/3105
Abstract:
A method of etching is described. The method includes providing a substrate having a first material containing organic material and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing S and O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.
Public/Granted literature
- US20180315615A1 METHOD OF CYCLIC PLASMA ETCHING OF ORGANIC FILM USING SULFUR-BASED CHEMISTRY Public/Granted day:2018-11-01
Information query
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