Invention Grant
- Patent Title: Forming semiconductor structures with two-dimensional materials
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Application No.: US16005363Application Date: 2018-06-11
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Publication No.: US10541132B2Publication Date: 2020-01-21
- Inventor: Shih-Yen Lin , Hsuan-An Chen , Si-Chen Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. , National Taiwan University
- Applicant Address: TW Hsinchu TW Taipei
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Hsinchu TW Taipei
- Agency: Seed IP Law Group LLP
- Main IPC: H01L29/24
- IPC: H01L29/24 ; H01L21/02 ; H01L29/16 ; H01L29/267
Abstract:
The current disclosure describes semiconductor devices, e.g., transistors, include a substrate, a semiconductor region including, at the surface, MoS2 and/or other monolayer material over the substrate, and a terminal structure at least partially over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.
Public/Granted literature
- US20190378715A1 FORMING SEMICONDCUTOR STRUCTURES WITH TWO-DIMENSIONAL MATERIALS Public/Granted day:2019-12-12
Information query
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