Invention Grant
- Patent Title: Backside illuminated global shutter pixel with active reset
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Application No.: US16166442Application Date: 2018-10-22
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Publication No.: US10531027B2Publication Date: 2020-01-07
- Inventor: Tomas Geurts
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Treyz Law Group, P.C.
- Agent Joseph F. Guihan
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/363 ; H04N5/3745

Abstract:
An image sensor may include an array of pixels arranged in rows and columns. The array of pixels may operate in a global shutter mode. Each pixel in the array of pixels may have a floating diffusion node for storing charge and may include an active reset circuit that acts as an inverting amplifier and that resets the floating diffusion node to a predetermined reference voltage, which eliminates the need for correlated double sampling readout. A sampling circuit may be coupled to the active reset circuit. The sampling circuit may sample and store signals that correspond to the amount of charge stored at the floating diffusion node. The sampling circuit may pass stored signals to a column sensing line through an amplifier. The amplifier may include a source follower transistor that provides proportional amplification to the stored signals and may include an active reset circuit for resetting the sampling circuit.
Public/Granted literature
- US20190058840A1 BACKSIDE ILLUMINATED GLOBAL SHUTTER PIXEL WITH ACTIVE RESET Public/Granted day:2019-02-21
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