Invention Grant
- Patent Title: Semiconductor device having first and second transmission lines with a high-K dielectric material disposed between the first and second transmission lines
-
Application No.: US15696337Application Date: 2017-09-06
-
Publication No.: US10530030B2Publication Date: 2020-01-07
- Inventor: Jiun Yi Wu , Chien-Hsun Lee , Chewn-Pu Jou , Fu-Lung Hsueh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01P3/02
- IPC: H01P3/02 ; H01P3/08 ; H01P11/00 ; H01P3/06
Abstract:
A semiconductor device includes a first transmission line and a second transmission line. The semiconductor device further includes a high-k dielectric material between the first transmission line and the second transmission line. The semiconductor device further includes a dielectric material directly contacting at least one of the first transmission line or the second transmission line, wherein the dielectric material has a different dielectric constant from the high-k dielectric material.
Public/Granted literature
- US20170365906A1 SEMICONDUCTOR DEVICE INCLUDING TRANSMISSION LINES AND METHOD OF FORMING THE SAME Public/Granted day:2017-12-21
Information query
