Invention Grant
- Patent Title: Optoelectronic element
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Application No.: US15678885Application Date: 2017-08-16
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Publication No.: US10529898B2Publication Date: 2020-01-07
- Inventor: Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu , Masafumi Sano , Chih-Ming Wang
- Applicant: Epistar Corporation
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L33/50
- IPC: H01L33/50 ; H01L33/58 ; H01L33/62 ; H01L33/38 ; H01L33/44 ; H01L33/46 ; H01L33/54 ; H01L33/64

Abstract:
An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.
Public/Granted literature
- US20170365750A1 OPTOELECTRONIC ELEMENT Public/Granted day:2017-12-21
Information query
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