- Patent Title: Ferroelectric memory device and method of manufacturing the same
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Application No.: US16004309Application Date: 2018-06-08
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Publication No.: US10529852B2Publication Date: 2020-01-07
- Inventor: Hyangkeun Yoo
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Priority: KR10-2017-0143796 20171031
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/51 ; H01L29/66 ; H01L21/28 ; H01L27/1159 ; H01L45/00
Abstract:
A ferroelectric memory device according to an embodiment of the present disclosure includes a substrate, a ferroelectric material layer disposed on the substrate, a gate electrode layer disposed on the ferroelectric material layer, and a polarization switching seed layer disposed between the ferroelectric material layer and the gate electrode layer.
Public/Granted literature
- US20190131458A1 FERROELECTRIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-05-02
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