Invention Grant
- Patent Title: Methods of making semiconductor x-ray detector
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Application No.: US16038472Application Date: 2018-07-18
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Publication No.: US10529770B2Publication Date: 2020-01-07
- Inventor: Peiyan Cao , Yurun Liu
- Applicant: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
- Applicant Address: CN Shenzhen
- Assignee: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen
- Agency: IPro, PLLC
- Agent Qian Gu
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/18 ; H01L31/02 ; H01L31/0224 ; H01L31/0304 ; H01L31/115 ; H02S40/44 ; H01L31/09 ; G01T1/24

Abstract:
Disclosed herein is an apparatus comprising: an X-ray absorption layer; a first electrical contact and a second electrical contact on opposing surfaces of the X-ray absorption layer; wherein the first electrical contact and the second electrical contact respectively comprise structures extending into the X-ray absorption layer.
Public/Granted literature
- US20180342554A1 Methods of Making Semiconductor X-Ray Detector Public/Granted day:2018-11-29
Information query
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