Invention Grant
- Patent Title: Method and structure to construct cylindrical interconnects to reduce resistance
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Application No.: US15882301Application Date: 2018-01-29
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Publication No.: US10529662B2Publication Date: 2020-01-07
- Inventor: Benjamin D. Briggs , Michael Rizzolo , Christopher J. Penny , Huai Huang , Lawrence A. Clevenger , Hosadurga Shobha
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Vazken Alexanian
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/522 ; H01L21/768 ; H01L21/3105 ; H01L21/311 ; H01L21/3213
Abstract:
A method for manufacturing a semiconductor device includes forming a plurality of trenches in a dielectric layer, wherein the plurality of trenches each comprise a rounded surface, depositing a liner layer on the rounded surface of each of plurality of trenches, and depositing a conductive layer on the liner layer in each of the plurality of trenches, wherein the conductive layer and the liner layer form a plurality of interconnects, and each of the plurality of interconnects has a cylindrical shape.
Public/Granted literature
- US20190237402A1 METHOD AND STRUCTURE TO CONSTRUCT CYLINDRICAL INTERCONNECTS TO REDUCE RESISTANCE Public/Granted day:2019-08-01
Information query
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