Invention Grant
- Patent Title: Methods of manufacturing a semiconductor device
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Application No.: US15870175Application Date: 2018-01-12
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Publication No.: US10529618B2Publication Date: 2020-01-07
- Inventor: Siqing Lu , Sang-Hoon Ahn , Xinglong Chen , Ki-Hyun Kim , Kyu-In Shim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2017-0071389 20170608
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/768 ; H01L23/528 ; H01L21/02 ; H01L21/311 ; H01L23/522 ; H01L21/027 ; H01L21/321
Abstract:
A method of manufacturing a semiconductor device is disclosed. The method includes forming a first insulting layer on a substrate, forming a first conductor pattern in the first insulating layer, forming a second insulating layer on the first insulating layer, and forming a second wiring pattern and a contact via in the second insulating layer, wherein a top surface of the first insulating layer is higher than a top surface of the first conductor pattern.
Public/Granted literature
- US20180358262A1 METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2018-12-13
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