Semiconductor package comprising molding compound having extended portion and manufacturing method of semiconductor package
Abstract:
A semiconductor package manufacturing method thereof are provided. The semiconductor package includes a high-power device die, a redistribution structure, a heat dissipation module and a molding compound. The high-power device die has a front side and a back side opposite to the front side. The redistribution structure is disposed at the front side. The heat dissipation module is in direct contact with the back side. The molding compound is disposed between the redistribution structure and the heat dissipation module, and surrounding the high-power device die. The molding compound has a body portion and an extended portion. An interface between the body portion and the heat dissipation module is substantially parallel to the back side of the high-power device die. A thickness of the extended portion is greater than a thickness of the body portion.
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