Invention Grant
- Patent Title: Layout design for fanout patterns in self-aligned double patterning process
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Application No.: US16012608Application Date: 2018-06-19
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Publication No.: US10497566B1Publication Date: 2019-12-03
- Inventor: Chin-Cheng Yang , Chi-Hao Huang , Wei-Hung Wang
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L23/522 ; H01L23/528 ; H01L21/768 ; H01L27/105

Abstract:
A circuit structure comprises a plurality of first conducting lines extending in a first direction, the first conducting lines having a first pitch in a second direction orthogonal to the first direction; a plurality of linking lines extending in the second direction, the linking lines having a second pitch in the first direction, the second pitch being greater than the first pitch; and a plurality of connection structures connecting respective first conducting lines for current flow to respective linking lines, the connection structures each including a plurality of segments extending in the first direction, segments in the plurality of segments having a transition pitch in the second direction relative to adjacent segments in the plurality of segments greater than or equal to the first pitch, and less than the second pitch.
Public/Granted literature
- US20190385848A1 LAYOUT DESIGN FOR FANOUT PATTERNS IN SELF-ALIGNED DOUBLE PATTERNING PROCESS Public/Granted day:2019-12-19
Information query
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