Invention Grant
- Patent Title: Method for forming a magnetoresistive device
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Application No.: US15488144Application Date: 2017-04-14
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Publication No.: US10403813B2Publication Date: 2019-09-03
- Inventor: Wolfgang Raberg
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Schiff Hardin LLP
- Main IPC: G11B5/127
- IPC: G11B5/127 ; H04R31/00 ; H01L43/12 ; G01R33/09 ; G01R33/00 ; H01L43/02 ; H01L43/08

Abstract:
Embodiments relate to magnetoresistive (xMR) sensors. In an embodiment, an xMR stack structure is configured to form two different xMR elements that can be coupled to form a locally differential Wheatstone bridge. The result is a highly sensitive magnetic sensor with small dimensions and robustness against thermal drift and sensor/encoder pitch mismatch that can be produced using standard processing equipment. Embodiments also relate to methods of forming and patterning the stack structure and sensors that provide information regarding direction in addition to speed.
Public/Granted literature
- US20170222137A1 XMR MONOCELL SENSORS, SYSTEMS AND METHODS Public/Granted day:2017-08-03
Information query
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