Invention Grant
- Patent Title: Method for manufacturing semiconductor light-emitting device
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Application No.: US16153325Application Date: 2018-10-05
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Publication No.: US10403790B2Publication Date: 2019-09-03
- Inventor: Hiroshi Katsuno , Masakazu Sawano , Kazuyuki Miyabe
- Applicant: ALPAD CORPORATION
- Applicant Address: JP Tokyo
- Assignee: ALPAD CORPORATION
- Current Assignee: ALPAD CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2015-120275 20150615
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/22 ; H01L33/20 ; H01L33/38 ; H01L33/44 ; H01L33/62

Abstract:
A semiconductor light-emitting device includes a light-emitting member that includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer, a first metal layer electrically connected to the first semiconductor layer, and a second metal layer electrically connected to the second semiconductor layer. The light-emitting member has a first surface including a front surface of the first semiconductor layer, a second surface including a front surface of the second semiconductor layer, a side surface including an outer periphery of the first semiconductor layer, and a recess extending inwardly of the second surface to an interior portion of the first semiconductor layer to expose an inner surface on a side of the recess facing the side surface.
Public/Granted literature
- US20190051795A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2019-02-14
Information query
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