Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing the same
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Application No.: US15970450Application Date: 2018-05-03
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Publication No.: US10403754B2Publication Date: 2019-09-03
- Inventor: Sung-Dae Suk , Sunhom Steve Paak , Yeon-Ho Park , Dong-Ho Cha
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0081701 20150610
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L29/06 ; H01L29/423 ; H01L29/417 ; H01L29/66
Abstract:
Semiconductor devices are provided. A semiconductor device includes a channel. The semiconductor device includes a gate structure having first and second portions. The channel is between the first and second portions of the gate structure. A contact structure is adjacent a portion of a side surface of the channel. Related methods of forming semiconductor devices are also provided.
Public/Granted literature
- US20180254341A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2018-09-06
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