Invention Grant
- Patent Title: Controlling structural phase transitions and properties of two-dimensional materials by integrating with multiferroic layers
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Application No.: US15819987Application Date: 2017-11-21
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Publication No.: US10403753B2Publication Date: 2019-09-03
- Inventor: Berend T. Jonker , Connie H. Li , Kathleen M. McCreary
- Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
- Applicant Address: US DC Washington
- Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Roy Roberts
- Main IPC: H01L29/78
- IPC: H01L29/78 ; G11C11/22 ; H01L29/66 ; H01L29/68 ; G11C11/56 ; G11C11/02 ; H01L29/51 ; G11C11/14 ; G11C13/00 ; H01L29/70 ; H01L43/08 ; H01L31/032 ; G01R33/09 ; H01L29/735 ; H01L29/739 ; H01L43/10 ; H01F10/193 ; H01L29/861 ; H01L29/24
Abstract:
The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains and surface charges in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields and surface charges can control the structural phase of the two-dimensional material, which in turn determines whether the two-dimensional material layer is insulating or metallic, has a band gap or no band gap, and whether it is magnetic or non-magnetic. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.
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