Invention Grant
- Patent Title: Lateral diffusion metal oxide semiconductor (LDMOS) device including plurality of second regions and manufacture thereof
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Application No.: US15867379Application Date: 2018-01-10
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Publication No.: US10403750B2Publication Date: 2019-09-03
- Inventor: Lei Fang
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN CN
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee Address: CN CN
- Agency: Innovation Counsel LLP
- Priority: CN201710045044 20170122
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L29/10 ; H01L21/265 ; H01L21/266
Abstract:
A Lateral Diffusion Metal Oxide Semiconductor (LDMOS) device and its manufacturing method are presented. The LDMOS device comprises a first region that has a first conductivity type; a drift region that has a second conductivity type in the first region, wherein the second conductivity type is opposite to the first conductivity type; and a plurality of second regions that have the first conductivity type in the drift region, wherein the second regions are separated from each other and extend to the first region along a depth direction of the drift region. This LDMOS device has an higher Breakdown Voltage and thus better performance than conventional LDMOS devices.
Public/Granted literature
- US20180212053A1 LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR (LDMOS) DEVICE AND MANUFACTURE THEREOF Public/Granted day:2018-07-26
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